IGBT Transistors 600V Low-Vceon
IRGIB7B60KDPBF: IGBT Transistors 600V Low-Vceon
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Features: · Advanced Trench IGBT Technology· Optimized for Sustain and Energy Recovery circuits in...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Collector-Emitter Saturation Voltage : | 2.2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
| Continuous Collector Current at 25 C : | 12 A | Power Dissipation : | 39 W | ||
| Package / Case : | TO-220FP | Packaging : | Tube |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 12 | A |
| IC @ TC = 100 | Continuous Collector Current | 8.0 | A |
| ICM | Pulse Collector Current (Ref. Fig. C.T.5) | 24 | A |
| ILM | Clamped Inductive Load Current | 24 | A |
| IF @TC = 25 | Diode Continous Forward Current | 9.0 | A |
| IF @TC = 25 | Diode Continous Forward Current | 6.0 | A |
| IFM | Maximum Repetitive Forward Current |
18 |
A |
| VISOL | RMS Isolation Voltage, Terminal to Case, t=1 min. | 2500 | V |
| VGE | Continuous Gate-to-Emitter Voltage | ±20 | V |
| PD @ TC = 25 | Maximum Power Dissipation | 39 | W |
| PD @ TC = 100 | Maximum Power Dissipation | 20 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw | 10 lbf`in (1.1 N`m) |
| Technical/Catalog Information | IRGIB7B60KDPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 12A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 8A |
| Power - Max | 39W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Fullpak (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGIB7B60KDPBF IRGIB7B60KDPBF |