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MFG:IR  Package Cooled:N/A  D/C:08+  

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Part Number: IRGIB7B60KDPbF

 

MFG: IR

Package Cooled: N/A

D/C: 08+

 

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IRGIB7B60KDPbF Maximum Ratings

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25 Continuous Collector Current 12 A
IC @ TC = 100 Continuous Collector Current 8.0 A
ICM Pulse Collector Current (Ref. Fig. C.T.5) 24 A
ILM Clamped Inductive Load Current 24 A
IF @TC = 25 Diode Continous Forward Current 9.0 A
IF @TC = 25 Diode Continous Forward Current 6.0 A
IFM Maximum Repetitive Forward Current

18

 A
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V
VGE Continuous Gate-to-Emitter Voltage ±20 V
PD @ TC = 25 Maximum Power Dissipation 39 W
PD @ TC = 100 Maximum Power Dissipation 20 W
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
  Mounting Torque, 6-32 or M3 Screw 10 lbf`in (1.1 N`m)  

IRGIB7B60KDPbF Features

• Low VCE (on) Non Punch Through IGBT Technology.
• 10s Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free

IRGIB7B60KDPbF datasheet

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