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Part Number: IRGP20B60PD

 

MFG: IR

 

 

Description: •Parallel Operation for Higher Current Applications•Lower Conduction Losses and Switching Losses...


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IRGP20B60PD General Description


•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz

IRGP20B60PD Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IF@ TC= 25° CContinuous Collector Current 40 A
IF@ TC= 100° CContinuous Collector Current 22 A
ICM Pulsed Collector Current 80 A
ICM Clamped Inductive Load Current 80 A
IF@ TC= 25° 31 A
IF@ TC= 100° CDiode Continuous Forward Current 12 A
LSM Diode Maximum Forward Current 42 A
VGE Gate-to-Emitter Voltage ± 20 V
PD@ TC= 25° CMaximum Power Dissipation 220 W
PD@ TC= 100° CMaximum Power Dissipation 86 W
TJ
TSTG

Operating Junction and

Storage Temperature Range

-55 to +150 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

IRGP20B60PD Features

•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability

IRGP20B60PD Typical Application

•Telecom and Server SMPS
•PFC and ZVS SMPS Circuits
•Uninterruptable Power Supplies
•Consumer Electronics Power Supplies

IRGP20B60PD datasheet

IRGP20B60PD
PDF/DataSheet Download

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