IRGP30B120KD-EP

Gate-Emitter Leakage Current :
Maximum Operating Temperature : + 150 C
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 60 A
Collector- Emitter Voltage VCEO Max : 1.2 KV
Power Dissipation : 300 W
Collector-Emitter Saturation Voltage : 2.28 V


Features:

• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 s Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Breakdown Voltage	1200	V
IC @ TC = 25°C	Continuous Collector Current (Fig.1)	60	A
IC @ TC = 100°C	Continuous Collector Current (Fig.1)	30
ICM	Pulsed Collector Current (Fig.3, Fig. CT.5)	120
ILM	Clamped Inductive Load Current(Fig.4, Fig. CT.2)	120
IF @ TC = 100°C	Diode Continuous Forward Current	30
IFM	Diode Maximum Forward Current	120
VGE	Gate-to-Emitter Voltage	± 20	V
PD @ TC = 25°C	Maximum Power Dissipation (Fig.2)	300	W
PD @ TC = 100°C	Maximum Power Dissipation (Fig.2)	120
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300, (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 screw.	10 lbf•in (1.1N•m)

Description

 


Parameters:

Technical/Catalog Information	IRGP30B120KD-EP
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	60A
Vce(on) (Max) @ Vge, Ic	4V @ 15V, 60A
Power - Max	300W
Mounting Type	Through Hole
Package / Case	TO-247-3 (TO-247AD, Straight Leads)
Packaging	Bag
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRGP30B120KD EP IRGP30B120KDEP