IGBT Transistors
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
| Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.28 V |
| Maximum Gate Emitter Voltage : | +/- 20 V | Continuous Collector Current at 25 C : | 60 A |
| Gate-Emitter Leakage Current : | +/- 100 nA | Power Dissipation : | 300 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | TO-247AD |
| Packaging : | Tube |
| Technical/Catalog Information | IRGP30B120KDPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 60A |
| Power - Max | 300W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Bag |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRGP30B120KDPBF IRGP30B120KDPBF |