IGBT Transistors
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 1.85 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 60 A | Power Dissipation : | 308 W | ||
Package / Case : | TO-247AD | Packaging : | Tube |