Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery circuits in PDP applications·TM Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency ·High repetitive peak current capability Lead Free packageSpecifications Symbol Parameter Max. ...
IRGP4055PbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery circuits in PDP applications·TM Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency ·High ...
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Features: • UltraFast Non Punch Through (NPT) Technology• 10 µs Short Circuit ca...
| Symbol |
Parameter |
Max. |
Units |
| VDS | Drain-Source Voltage |
±30 |
V |
| IC @ TC =25 | Continuous Drain Current,VGE @ 15V |
110 |
A |
| IC @ TC =100 | Continuous Drain Current,VGE @ 15V |
60 | |
| VRP TC =25 | Pulsed Drain Current |
270 | |
| PD @TC=25 | Power Dissipation |
255 |
W |
| PD @TC=100 | Power Dissipation |
102 |
W |
| Linear Derating Factor |
2.04 |
W/ | |
| TJ,TSTG | Operating Junction and Storage Temperature Range |
-40 to+175 |
|
| Storage Temperature for 10 seconds |
300 |
||
| Mounting Torque, 6-32 or M3 Screw | 10lbin (1.1Nm) |
N |
This IGBT IRGP4055PbF is specifically designed for applications in Plasma Display Panels. The IRGP4055PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak curren capability. The IRGP4055PbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.