IRGP4055PbF

Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery circuits in PDP applications·TM Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency ·High repetitive peak current capability Lead Free packageSpecifications Symbol Parameter Max. ...

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IRGP4055PbF Picture
SeekIC No. : 004377857 Detail

IRGP4055PbF: Features: ·Advanced Trench IGBT Technology ·Optimized for Sustain and Energy Recovery circuits in PDP applications·TM Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency ·High ...

floor Price/Ceiling Price

Part Number:
IRGP4055PbF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Description



Features:

·Advanced Trench IGBT Technology
·Optimized for Sustain and Energy Recovery circuits in PDP applications
·TM Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency
·High repetitive peak current capability Lead Free package



Specifications

Symbol
Parameter
Max.
Units
VDS Drain-Source Voltage
±30
V
IC @ TC =25 Continuous Drain Current,VGE @ 15V
110
A
IC @ TC =100 Continuous Drain Current,VGE @ 15V
60
VRP TC =25 Pulsed Drain Current
270
PD @TC=25 Power Dissipation
255
W
PD @TC=100 Power Dissipation
102
W
  Linear Derating Factor
2.04
W/
TJ,TSTG Operating Junction and Storage Temperature Range
-40 to+175
  Storage Temperature for 10 seconds
300
  Mounting Torque, 6-32 or M3 Screw 10lbin (1.1Nm)
N



Description

This IGBT IRGP4055PbF is specifically designed for applications in Plasma Display Panels. The IRGP4055PbF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM  rating per silicon area which improve panel efficiency. Additional features are 150 operating junction temperature and high repetitive peak curren capability. The IRGP4055PbF features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.




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