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IRGP50B60PD

Features: • NPT Technology, Positive Temperature Coefficient• Lower VCE(SAT)• Lower Parasitic Capacitances• Minimal Tail Current• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode• Tighter Distribution of Parameters• Higher ReliabilityApplication• Telec...

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IRGP50B60PD: Features: • NPT Technology, Positive Temperature Coefficient• Lower VCE(SAT)• Lower Parasitic Capacitances• Minimal Tail Current• HEXFRED Ultra Fast Soft-Recovery Co-Pa...

IRGP50B60PD Data Sheet

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Part Number:
IRGP50B60PD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• NPT Technology, Positive Temperature Coefficient
• Lower VCE(SAT)
• Lower Parasitic Capacitances
• Minimal Tail Current
• HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
• Tighter Distribution of Parameters
• Higher Reliability




Application

• Telecom and Server SMPS
• PFC and ZVS SMPS Circuits
• Uninterruptable Power Supplies
• Consumer Electronics Power Supplies




Specifications

 Parameter
Max.
Units
VCES
 Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
 Continuous Collector Current
75
A
IC @ TC = 100°C
 Continuous Collector Current
42
A
ICM
 Pulse Collector Current (Ref. Fig. C.T.4)
150
A
ILM
 Clamped Inductive Load Current
150
A
IF @ TC = 25°C
 Diode Continous Forward Current
50
A
IF @ TC = 100°C
 Diode Continous Forward Current
25
A
IFRM
 Maximum Repetitive Forward Current
100
A
VGE
 Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
 Maximum Power Dissipation
370
W
PD @ TC = 100°C
 Maximum Power Dissipation
150
W
TJ
TSTG
 Operating Junction and Storage Temperature Range
-55 to +150
Soldering Temperature for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf`in (1.1 N`m)





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