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IRGP50B60PD1

Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode•Tighter Distribution of Parameters•Higher ReliabilityApplication•Telecom and S...

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IRGP50B60PD1: Features: •NPT Technology, Positive Temperature Coefficient•Lower VCE(SAT)•Lower Parasitic Capacitances•Minimal Tail Current•HEXFRED Ultra Fast Soft-Recovery Co-Pack Di...

IRGP50B60PD1 Data Sheet

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Part Number:
IRGP50B60PD1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability




Application

•Telecom and Server SMPS
•PFC and ZVS SMPS Circuits
•Uninterruptable Power Supplies
•Consumer Electronics Power Supplies




Specifications

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IF@ TC= 25° CContinuous Collector Current 75 A
IF@ TC= 100° CContinuous Collector Current 45 A
ICM Pulsed Collector Current 150 A
ICM Clamped Inductive Load Current 150 A
IF@ TC= 25° 40 A
IF@ TC= 100° CDiode Continuous Forward Current 15 A
LSM Diode Maximum Forward Current 60 A
VGE Gate-to-Emitter Voltage ± 20 V
PD@ TC= 25° CMaximum Power Dissipation 390 W
PD@ TC= 100° CMaximum Power Dissipation 156 W
TJ
TSTG

Operating Junction and

Storage Temperature Range

 -55 to +150 °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)





Description

•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz

IRGP50B60PD1


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