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MFG:IR  Package Cooled:04+  D/C:247  

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Part Number: IRGPC40U

 

MFG: IR

Package Cooled: 04+

D/C: 247

Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...


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IRGPC40U General Description


Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

IRGPC40U Maximum Ratings

 
Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C Continuous Collector Current
40
A
IC @ TC = 100°C Continuous Collector Current
20
ICM Pulsed Collector Current
160
ILM Clamped Inductive Load Current
160
VGE Gate-to-Emitter Voltage
±20
V
EARV Reverse Voltage Avalanche Energy
15
mJ
PD @ TC = 25°C Maximum Power Dissipation
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  Mounting torque, 6-32 or M3 screw.
10 lbf`in (1.1N`m)

IRGPC40U Features

• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve

IRGPC40U datasheet

IRGPC40U
PDF/DataSheet Download

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