MFG:IR Package Cooled:TO-247 D/C:05+
MFG: IR
Package Cooled: TO-247
D/C: 05+
Description: Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They prov...
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
|
Parameter |
Max. |
Units | |
| VCES | Collector-to-Emitter Voltage |
600 |
V |
| IC @ TC = 25°C | Continuous Collector Current |
40 |
A |
| IC @ TC = 100°C | Continuous Collector Current |
20 | |
| ICM | Pulsed Collector Current |
160 | |
| ILM | Clamped Inductive Load Current |
160 | |
| IF @ TC = 100°C | Diode Continuous Forward Current |
15 | |
| IFM | Diode Maximum Forward Current |
160 | |
| VGE | Gate-to-Emitter Voltage |
± 20 |
V |
| PD @TC = 25°C | Maximum Power Dissipation |
160 |
W |
| PD @ TC = 100°C | Maximum Power Dissipation |
65 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| Soldering Temperature, for 10 sec. |
300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. |
10 lbf•in (1.1 N•m) |
IRGPC40UD2
PDF/DataSheet Download
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPC40Uhave higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPC40U...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPC40S have higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPC40S...
Co-packaged IGBTs IRGPC40MD2 are a natural extension of International Rectifier's well known IGBT line. The IRGPC40MD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPC40M have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPC40...
Co-packaged IGBTs IRGPC40KD2 are a natural extension of International Rectifier's well known IGBT line. The IRGPC40KD2provides the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-volt...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPC40Khave higher usable current densities than comparable bipolar transistors,while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPC40Kp...
Price: 35-40 USD
HD64F7058BF80LV Renesas SuperHTM RISC engine MQFP
Price: 20-30 USD
RF Power Field Effect Transistor, 300 W, 32V, N-Channel Enhancement-Mode, LDMOS, 860 MHz
Price: 3.2-4 USD
3.3V CPLD, QFP144, 3,200 usable gates, -0.5 to 5.5 V, 178 MHz, excellent quality
Price: 1-30 USD
20-SOIC, 8-bit microcomputer, 24MHz, 4 V ~ 6 V, ATMEL
Price: 2.8-3.8 USD
6-channel, common-source, power DMOS array, ZIP, High Output Voltage, 60 V
Price: 0.1-100 USD
32-bit, 33MHz PCI Target I/O Accelerator, 40MHz Generic and ISA Local Bus Designs
Price: 0.092-0.14 USD
SMD Film Chip Capacitor, 1800pF, 50volts, ECHU1H182JB5, Panasonic Semiconductor
Price: 22.95-24.59 USD
MOS FET Power Amplifier Module PF0340A
Price: 0.1-100 USD
chip inductor, SMD, 750 mAmps, 0.16 Ohms, Inductance 0.27 uH
Price: 0.95-1.45 USD
500 mA, Step-Down Voltage Regulator, SOP8, 0.25Ω, DMOS Output Switch
Price: 400-450 USD
subsystem module, 20MHZ word rate, 3"×4"×0.5", D/A, TTL compatible, 8 and 10 bit ve...
Price: 3-5 USD
IC DAC 10BIT 300MSPS 48-LQFP - AD9751AST
