MFG:IR Package Cooled:TO-3P D/C:07+
MFG: IR
Package Cooled: TO-3P
D/C: 07+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications.
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25°C | Continuous Collector Current | 70 | A |
| IC @ TC = 100°C | Continuous Collector Current | 41 | A |
| ICM | Pulsed Collector Current | 320 | A |
| ILM | Clamped Inductive Load Current | 140 | A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRGPC50S
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