Purchase IRGPF50F, In-stock IRGPF50F From SeekIC.
MFG:IR D/C:02+
Part Number: IRGPF50F
MFG: IR
D/C: 02+
Description: Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current den...
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IRGPF50F
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DataSheet
General Description
IRGPF50F General Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
IRGPF50F Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 900 | V |
| IC @ TC = 25°C | Continuous Collector Current | 51 | A |
| IC @ TC = 100°C | Continuous Collector Current | 28 | A |
| ICM | Pulsed Collector Current | 100 | A |
| ILM | Clamped Inductive Load Current | 100 | A |
| VGE | Gate-to-Emitter Voltage | ±20 | V |
| EARV | Reverse Voltage Avalanche Energy | 20 | mJ |
| PD @ TC = 25°C | Maximum Power Dissipation | 200 | W |
| PD @ TC = 100°C | Maximum Power Dissipation | 78 | W |
| TJ TSTG | Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | °C | |
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRGPF50F Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
IRGPF50F
PDF/DataSheet Download
- Datasheet: IRGPF50F
- File Size: 112760 KB
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