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IRGPF50F

Features: • Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter Max. Units VCES Collector-to-Emitter Voltage 900 V IC @ TC = 25°C Cont...

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IRGPF50F: Features: • Switching-loss rating includes all tail losses• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Pa...

IRGPF50F Data Sheet

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Part Number:
IRGPF50F
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 51 A
IC @ TC = 100°C Continuous Collector Current 28 A
ICM Pulsed Collector Current 100 A
ILM Clamped Inductive Load Current 100 A
VGE Gate-to-Emitter Voltage ±20 V
EARV Reverse Voltage Avalanche Energy 20 mJ
PD @ TC = 25°C Maximum Power Dissipation 200 W
PD @ TC = 100°C Maximum Power Dissipation 78 W
TJ TSTG Operating Junction and
Storage Temperature Range		 -55 to +150 °C
  Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) °C
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier IRGPF50F have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. The IRGPF50F provides substantial benefits to a host of high-voltage, highcurrent applications.




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