Purchase IRGSL10B60KD, In-stock IRGSL10B60KD From SeekIC.
Part Number: IRGSL10B60KD
Description: INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
- Table of contents:
IRGSL10B60KD
-
Suppliers
DataSheet
General Description
IRGSL10B60KD General Description
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGSL10B60KD Maximum Ratings
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IF@ TC= 25° | CContinuous Collector Current | 22 | A |
| IF@ TC= 100° | CContinuous Collector Current | 12 | A |
| ICM | Pulsed Collector Current | 44 | A |
| ICM | Clamped Inductive Load Current | 44 | A |
| IF@ TC= 25° | CDiode Continuous Forward Current | 22 | A |
| IF@ TC= 100° | CDiode Continuous Forward Current | 10 | A |
| LSM | Diode Maximum Forward Current | 44 | A |
| VGE | Gate-to-Emitter Voltage | ± 20 | V |
| PD@ TC= 25° | CMaximum Power Dissipation | 156 | W |
| PD@ TC= 100° | CMaximum Power Dissipation | 62 | W |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | °C |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) |
IRGSL10B60KD Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
IRGSL10B60KD Typical Application
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGSL10B60KD
PDF/DataSheet Download
- Datasheet: IRGSL10B60KD
- File Size: 331848 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
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