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MFG:TO-262  Package Cooled:7850  D/C:IR  

IRGSL6B60KD Product Image

IRG Series Datasheet download

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Part Number: IRGSL6B60KD

 

MFG: TO-262

Package Cooled: 7850

D/C: IR

 

Urgent Purchase

IRGSL6B60KD Maximum Ratings

Parameter
Max.
Units
VCES Collector-to-Emitter Voltage
600
V
ID @ TC = 25°C Continuous Collector Current
13
A
ID @ TC = 100°C Continuous Collector Current
7.0
ICM Pulsed Collector Current
26
ILM Clamped Inductive Load Current
26
IF @ TC = 25°C Diode Continuous Forward Current
13
IF @ TC = 100°C Diode Continuous Forward Current
7.0
IFM Diode Maximum Forward Current
26
VGE Gate-to-Emitter Voltage
± 20
V
PD @TC = 25°C Max. Power Dissipation
90
W
PD @ TC = 100°C Maximum Power Dissipation
36
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
  

IRGSL6B60KD Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.

IRGSL6B60KD datasheet

IRGSL6B60KD
PDF/DataSheet Download

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