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IRGSL8B60K

Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.Specifications Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Contin...

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SeekIC No. : 004377934 Detail

IRGSL8B60K: Features: • Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability.• Square RBSOA.• Positive VCE (on) Temperature Coefficient.Specifications ...

IRGSL8B60K Data Sheet

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Part Number:
IRGSL8B60K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.


Specifications

  Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 28 A
IC @ TC = 100°C Continuous Collector Current 19
ICM Pulse Collector Current(Ref.Fig.C.T.5) 56
ILM Clamped Inductive Load current 56
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 167 W
PD @ TC = 100°C Maximum Power Dissipation 83
TJ
TSTG		 Operating Junction and Storage Temperature Range -55 to +175 °C
  Mounting Torque, 6-32 or M3 Screw 10 lbf`in (1.1 N`m)
 


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