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IRHF593130

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -20V TC=25 Continuous Drain Current -6.7 A I...

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IRHF593130: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications ...

IRHF593130 Data Sheet

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Part Number:
IRHF593130
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight




Specifications

Parameter Units

ID @ VGS = -20V TC=25

Continuous Drain Current

-6.7

A

ID @ VGS =-12V TC=100

Continuous Drain Current

-4.3

IDM

Pulsed Drain Current

-26.8

PD @ TC = 25

Max. Power Dissipation

25

W

Linear Derating Factor

0.2

W/

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

240

mJ

IAR

Avalanche Current

-6.7

A

EAR

Repetitive Avalanche Energy

2.5

mJ

dv/dt

Peak Diode Recovery dv/dt

-17

V/ns

TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to +150

Lead Temperature

300 (0.063 in./1.6 mm from case for 10s)

Weight

0.98 (Typical )

g


Notes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25, L =10.6mH Peak IL = -6.7A, VGS = -12V
ISD -6.7A, di/dt -530A/µs,VDD -100V, TJ 150




Description

International Rectifier's R5TM technology IRHF593130 provides high performance power MOSFETs for space applications. These devices IRHF593130 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF593130 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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