Position: Home  > All Categories> Integrated Circuits (ICs) > IRHMS597Z60

IRHMS597Z60

Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Conti...

product image

IRHMS597Z60 Picture
See larger image
SeekIC No. : 004378043 Detail

IRHMS597Z60: Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

IRHMS597Z60 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHMS597Z60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

··Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -45* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -45*
IDM Pulsed Drain Current -180
PD @ TC = 25°C Max. Power Dissipation 208 W
  Linear Derating Factor 1.67 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 1250 mJ
IAR Avalanche Current -45 A
EAR Repetitive Avalanche Energy 20.8 mJ
dv/dt Peak Diode Recovery dv/dt -0.6 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (0.063in./1.6mm from case for 10s)
  Weight 9.3 ( Typical ) g



Description

International Rectifier IRHMS597Z60 's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS597Z60 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS597Z60 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

 




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
LED Products
LM24P20
KCG057QV1DB-G770
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Audio Products
HUC1002
WM-64CT
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more