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IRHMS67160

Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25...

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SeekIC No. : 004378044 Detail

IRHMS67160: Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

IRHMS67160 Data Sheet

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Part Number:
IRHMS67160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
 Continuous Drain Current
45*
A
ID @ VGS = 12V, TC = 100
 Continuous Drain Current
45*
IDM
 Pulsed Drain Current
180
PD @ TC = 25
 Max. Power Dissipation
208
W
 Linear Derating Factor
1.67
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
512
mJ
IAR
 Avalanche Current 
45
A
EAR
 Repetitive Avalanche Energy
20.8
mJ
dv/dt
Peak Diode Recovery dv/dt
6.3
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063 in. /1.6 mm from case for 10s)
 Weight
9.3 (Typical)
g

* Current is limited by package
For footnotes refer to the last page




Description

International Rectifier IRHMS67160 's R6TM technology provides superior power MOSFETs for space applications. These devices IRHMS67160 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHMS67160 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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