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IRHN8450

Features: · Radiation Hardened up to 1 x 106 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating· Dynamic dv/dt Rating· Simple ...

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SeekIC No. : 004378062 Detail

IRHN8450: Features: · Radiation Hardened up to 1 x 106 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical ...

IRHN8450 Data Sheet

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Part Number:
IRHN8450
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Description



Features:

· Radiation Hardened up to 1 x 106 Rads (Si)
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated
· Ceramic Eyelets
· Surface Mount
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 11 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 7.0 A
IDM Pulsed Drain Current 44 A
PD @ TC = 25°C Max. Power Dissipation 150 W
  Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 11 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
TJ Operating Junction -55 to 150 oC
TSTG Storage Temperature Range   oC
  Pckg. Mounting Surface Temp. 300 (for 5s) oC
  Weight 2.6 (Typical) g



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