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IRHN93150

Features: · Radiation Hardened up to 3 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating·Dynamic dv/dt Rating· Simple Dr...

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SeekIC No. : 004378067 Detail

IRHN93150: Features: · Radiation Hardened up to 3 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant·Identical P...

IRHN93150 Data Sheet

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Part Number:
IRHN93150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Radiation Hardened up to 3 x 105 Rads (Si)
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
·Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Lightweight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -22 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -14 A
IDM Pulsed Drain Current ➀ -88 A
PD @ TC = 25°C Max. Power Dissipation 150 W
  Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 500 mJ
IAR Avalanche Current ➀ -22 A
EAR Repetitive Avalanche Energy ➀ 15 mJ
dv/dt Peak Diode Recovery dv/dt ➂ -23 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150 oC
  Lead Temperature 300 (0.063 in. (1.6mm) from
case for 10 sec.)		 oC
  Weight 2.6 (Typical ) g



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