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IRHNB7160

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Surface MountLight WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current ...

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SeekIC No. : 004378096 Detail

IRHNB7160: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Surface MountLight W...

IRHNB7160 Data Sheet

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Part Number:
IRHNB7160
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Surface Mount
Light Weight


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 51 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 32.5
IDM Pulsed Drain Current 204
PD @ TC = 25 Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 51 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 7.3 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 3.5 (Typical) g



Description

International Rectifier's RADHard HEXFET® technology IRHNA9160   provides high performance power MOSFETs for space applications. This technology IRHNA9160  has over a decade of proven performance and reliability in satellite applications. These devices IRHNA9160  have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNA9160  retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical




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