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IRHNJ57034

Features: · Single Event Effect (SEE) Hardened· Ultra low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Cont...

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SeekIC No. : 004378101 Detail

IRHNJ57034: Features: · Single Event Effect (SEE) Hardened· Ultra low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

IRHNJ57034 Data Sheet

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Part Number:
IRHNJ57034
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 22* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 21 A
IDM Pulsed Drain Current ➀ 88 A
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 100 mJ
IAR Avalanche Current ➀ 22 A
EAR Repetitive Avalanche Energy ➀ 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 10 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (for 5s)
Weight 1.1 (Typical ) g



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