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IRHNJ57230SE

Features: ·Single Event Effect (SEE) Hardened ·Ultra Low RDS(on) ·Low Total Gate Charge ·Proton Tolerant ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CCon...

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SeekIC No. : 004378105 Detail

IRHNJ57230SE: Features: ·Single Event Effect (SEE) Hardened ·Ultra Low RDS(on) ·Low Total Gate Charge ·Proton Tolerant ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic ...

IRHNJ57230SE Data Sheet

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Part Number:
IRHNJ57230SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Ceramic Package
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 CContinuous Drain Curren
12
A
ID @ VGS=-2V,TC=100
 CContinuous Drain Curren
7.8
IDM
 Pulsed Drain Current
48
PD@ TC= 25
 CMax. Power Dissipatio
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
60
mJ
IAR
 Avalanche Current
12
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.4
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300(for 5s)
 Weight
1.0 ( Typical )
g



Description

International Rectifier!s R5TM  technology IRHNJ57230SE provides high performance power MOSFETs for space applications.  These devices IRHNJ57230SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).  The combination of low RDS(on)  and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  These devices IRHNJ57230SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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