IRHNJ67134

Features: · Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current ...

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SeekIC No. : 004378113 Detail

IRHNJ67134: Features: · Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light ...

floor Price/Ceiling Price

Part Number:
IRHNJ67134
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/29

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Product Details

Description



Features:

· Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 19 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 12
IDM Pulsed Drain Current 76
PD @ TC = 25 Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 60 mJ
IAR Avalanche Current 19 A
EAR Repetitive Avalanche Energy 7.5 mJ
dv/dt Peak Diode Recovery dv/dt 8.6 V/ns
TJ,TSTG Operating Junction Storage Temperature Range -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 1.0 (Typical) g



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