Features: · Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current ...
IRHNJ67134: Features: · Low RDS(on)·Fast Switching·Single Event Effect (SEE) Hardened·Low Total Gate Charge·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light ...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 19 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 12 | |
IDM | Pulsed Drain Current | 76 | |
PD @ TC = 25 | Max. Power Dissipation | 75 | W |
Linear Derating Factor | 0.6 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 60 | mJ |
IAR | Avalanche Current | 19 | A |
EAR | Repetitive Avalanche Energy | 7.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 8.6 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range | -55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 1.0 (Typical) | g |