IRL1004S

MOSFET N-CH 40V 130A D2PAK

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SeekIC No. : 003431657 Detail

IRL1004S: MOSFET N-CH 40V 130A D2PAK

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Part Number:
IRL1004S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 130A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 100nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5330pF @ 25V
Power - Max: 3.8W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 3.8W
Current - Continuous Drain (Id) @ 25° C: 130A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
Gate Charge (Qg) @ Vgs: 100nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5330pF @ 25V


Features:

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92 A
IDM Pulsed Drain Current 520 A
PD @ TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±16 V
EAS Single Pulse Avalanche Energy 700 mJ
IAR Avalanche Current 78 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1004S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design tIRL1004S hat HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL1004S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1004S  provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL1004S  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL1004S ) is available for lowprofile application.




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