MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 40V 130A D2PAK
| Technical/Catalog Information | IRL1004STRL |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 130A |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 78A, 10V |
| Input Capacitance (Ciss) @ Vds | 5330pF @ 25V |
| Power - Max | 3.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 100nC @ 4.5V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRL1004STRL IRL1004STRL |
IRL1004
PDF/DataSheet Download
IRL1004SPbF is a kind of power MOSFET.Here you can get some information about the features of IRL1004SPbF.First is logic-level gate drive.The second is advanced process technology.Then is ultra low on-resistance.Next is dynamic dv/dt rating.The fifth is 175...
Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1004S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
MOSFET N-CH 40V 130A TO-220AB
Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1004Lutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ...
Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1004 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d...
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