MFG:IR Package Cooled:TO-220 D/C:08+
MFG: IR
Package Cooled: TO-220
D/C: 08+
Description: Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing te...
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @10V |
104 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @10V |
74 |
A |
| IDM | Pulsed Drain Current |
416 |
|
| PD @TC = 25°C | Power Dissipation |
167 |
W |
| Linear Derating Factor |
1.1 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 16 |
V |
| EAS | Single Pulse Avalanche Energy |
340 |
mJ |
| IAR | Avalanche Current |
62 |
A |
| EAR | Repetitive Avalanche Energy |
17 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting torque, 6-32 or M3 screw. |
10 lbf•in (1.1N•m) |
IRL1104
PDF/DataSheet Download
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IRL1004SPbF is a kind of power MOSFET.Here you can get some information about the features of IRL1004SPbF.First is logic-level gate drive.The second is advanced process technology.Then is ultra low on-resistance.Next is dynamic dv/dt rating.The fifth is 175...
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