IRL1104

MOSFET N-CH 40V 104A TO-220AB

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IRL1104 Picture
SeekIC No. : 003433586 Detail

IRL1104: MOSFET N-CH 40V 104A TO-220AB

floor Price/Ceiling Price

Part Number:
IRL1104
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 104A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 68nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3445pF @ 25V
Power - Max: 167W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 1V @ 250µA
Drain to Source Voltage (Vdss): 40V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 167W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 8 mOhm @ 62A, 10V
Current - Continuous Drain (Id) @ 25° C: 104A
Gate Charge (Qg) @ Vgs: 68nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 3445pF @ 25V


Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
104
ID @ TC = 100°C Continuous Drain Current, VGS @10V
74
A
IDM Pulsed Drain Current
416
PD @TC = 25°C Power Dissipation
167
W
Linear Derating Factor
1.1
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
340
mJ
IAR Avalanche Current
62
A
EAR Repetitive Avalanche Energy
17
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)




Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRL1104 utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL1104 design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package of IRL1104 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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