IRL1404LPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 160 A
Package / Case : TO-262


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	160	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	110
IDM	Pulsed Drain Current	640
PD @ TA = 25	Power Dissipation	3.8	W
PD @ TC = 25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	520	mJ
IAR	Avalanche Current	95	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6 mm from case)

Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting T_J = 25, L = 0.35mH R_G = 25, I_AS = 95A. (See Figure 12)
I_SD 95A, di/dt 160A/s, V_DD V_(BR)DSS, T_J 175
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4.


Description

Seventh Generation HEXFET^® power MOSFETs from International Rectifier IRL1404LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRL1404LPbF device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRL1404LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1404LPbF provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak IRL1404LPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low.

Parameters:

Technical/Catalog Information	IRL1404LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	160A
Rds On (Max) @ Id, Vgs	4 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds	6600pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 5V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRL1404LPBF IRL1404LPBF