Purchase IRL1404LPbF, In-stock IRL1404LPbF From SeekIC.
MFG:N/A Package Cooled:NA/ D/C:09+
Part Number: IRL1404LPbF
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description:
Seventh Generation HEXFET® power MOSFETs from International Rectif...
- Table of contents:
IRL1404LPbF
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Suppliers
DataSheet
General Description
IRL1404LPbF General Description
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low.
IRL1404LPbF Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 110 | |
| IDM | Pulsed Drain Current | 640 | |
| PD @ TA = 25 | Power Dissipation | 3.8 | W |
| PD @ TC = 25 | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 520 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6 mm from case) |
Starting TJ = 25, L = 0.35mH RG = 25, IAS = 95A. (See Figure 12)
ISD 95A, di/dt 160A/s, VDD V(BR)DSS, TJ 175
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4.
IRL1404LPbF Features
`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free
IRL1004
PDF/DataSheet Download
- Datasheet: IRL1004
- File Size: 91524 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRL1004L
- HEXFET? Power MOSFET
- 125957 KB
- ·IRL1004S
- HEXFET? Power MOSFET
- 125957 KB
- ·IRL1104
- IRF [International Rectifier]
- HEXFET Power MOSFET
- 92621 KB
- ·IRL1104L
- HEXFET? Power MOSFET
- 197139 KB
- ·IRL1104S
- HEXFET? Power MOSFET
- 197139 KB
- ·IRL1404
- IRF [International Rectifier]
- HEXFET Power MOSFET
- 127861 KB
- ·IRL1404L
- HEXFET? Power MOSFET
- 136988 KB
- ·IRL1404S
- HEXFET? Power MOSFET
- 136988 KB
IRL1404LPbF Relative Products
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Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
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IRL1104SPbF
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