MFG:IR Package Cooled:TO-220AB D/C:650
MFG: IR
Package Cooled: TO-220AB
D/C: 650
Description: Seventh Generation HEXFET power MOSFETs from InternationalRectifier utilize advanced processing ...
Seventh Generation HEXFET power MOSFETs from InternationalRectifier utilize advanced processing techniques to ieve extremelylow on-resistance per silicon area. This benefit, combined with the fastswitching dnduggedizeddevicedesign that HEXFET powerMOSFETs are well known for, provides the designer with an extremelyefficient and abledevice foruse in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrialapplications at werdissipationlstoapproximately 50 watts. Thelow thermal resistance and low package cost of the TO-220 contribute toits wide acceptance throughout the industry.
|
|
Parameter |
Max. |
Units |
|
ID@TC =25 |
ontinuous Drain Current,VGS@10V |
160 |
A |
|
ID@TC =100 |
ontinuous Drain Current,VGS@10V |
110 | |
|
IDM |
Pulsed Drain Current |
640 | |
|
PD@TC =25 |
CPower Dissipatio |
200 |
W |
|
|
Linear Derating Factor |
1.3 |
W/ |
|
VGS |
Gate-to-Source Voltage |
± 20 |
v |
|
EAS |
Single Pulse Avalanche Energy |
620 |
mJ |
|
IAR |
Avalanche Current |
95 |
A |
|
EAR |
Repetitive Avalanche Energy |
20 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ, |
Operating Junction and |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) | |
|
|
Mounting torque, 6-32 or M3 srew |
10 lbf.in (1.1N.m) |
|
IRL1004
PDF/DataSheet Download
Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRL140...
Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
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