IRL1404PBF

MOSFET

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IRL1404PBF Picture
SeekIC No. : 00156261 Detail

IRL1404PBF: MOSFET

floor Price/Ceiling Price

US $ .96~.96 / Piece | Get Latest Price
Part Number:
IRL1404PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2250
  • Unit Price
  • $.96
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 4 m Ohms


Specifications

 

Parameter

Max.

Units

ID@TC =25

ontinuous Drain Current,VGS@10V

160

A

ID@TC =100

ontinuous Drain Current,VGS@10V

110

IDM

Pulsed Drain Current

640

PD@TC =25

CPower Dissipatio

200

W

 

Linear Derating Factor

1.3

W/

VGS

Gate-to-Source Voltage

± 20

v

EAS

Single Pulse Avalanche Energy

620

mJ

IAR

Avalanche Current

95

A

EAR

Repetitive Avalanche Energy

20

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ,
TSTG

Operating Junction and
Storage Temperature Range

-55 to + 175

 

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

 

Mounting torque, 6-32 or M3 srew

10 lbf.in (1.1N.m)

 




Description

Seventh Generation HEXFET  power MOSFETs from InternationalRectifier IRL1404PBF  utilize advanced processing techniques to ieve extremelylow  on-resistance per silicon area.  This benefit, combined with the fastswitching dnduggedizeddevicedesign that HEXFET powerMOSFETs IRL1404PBF are well known for, provides the designer with an extremelyefficient and abledevice foruse in a wide variety of applications.

The TO-220 package of IRL1404PBF  is universally preferred for all commercial-industrialapplications at werdissipationlstoapproximately 50 watts.  Thelow thermal resistance and low package cost of the TO-220 contribute toits wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRL1404PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs4 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds 6590pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL1404PBF
IRL1404PBF



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