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MFG:IR  Package Cooled:D2-PAK  D/C:09+  

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Part Number: IRL1404S

 

MFG: IR

Package Cooled: D2-PAK

D/C: 09+

Description: Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing ...


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IRL1404S General Description


Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for lowprofile applications

IRL1404S Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110 A
IDM Pulsed Drain Current 640 A
PD @ TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 520 mJ
IAR Avalanche Current 95 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)

IRL1404S datasheet

IRL1404S
PDF/DataSheet Download

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