MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing ...
Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for lowprofile applications
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 160 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 110 | A |
| IDM | Pulsed Drain Current | 640 | A |
| PD @ TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 200 | W |
| Linear Derating Factor | 1.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 520 | mJ |
| IAR | Avalanche Current | 95 | A |
| EAR | Repetitive Avalanche Energy | 20 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
IRL1404S
PDF/DataSheet Download
Seventh Generation HEXFET power MOSFETs from InternationalRectifier IRL1404PBF utilize advanced processing techniques to ieve extremelylow on-resistance per silicon area. This benefit, combined with the fastswitching dnduggedizeddevicedesign that HEXFET powe...
Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRL140...
Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desi...
MOSFET N-CH 40V 160A TO-220AB
MOSFET N-CH 40V 104A D2PAK
MOSFET N-CH 40V 104A D2PAK
Price: 24-25 USD
Single Die MOSFET, N-Channel Enhancement Mode, 600V, 44A, SOT-227B, 130mΩ
Price: 1-1 USD
Single-chip, 16/32-bit microcontrollers, QFP64
Price: 0.01-1 USD
NPN switching transistor, 200MA, 40V, SOT23, 250 mW, PMBT3904
Price: 1-2 USD
microprocessor, compatible 16-bit, digital-to-analog converter, 1000mW
Price: 3.15-3.26 USD
FT232RL FTDI USB Interface IC
Price: 4.5-5 USD
reader IC, 1356MHz, SOP32, ISO14443A
Price: 1.9-3 USD
rectifier module, 180A, 162mJ
Price: 10-25 USD
Bipolar transistor modules, 600V, 70min, 75A, 2.0μsec Switching time, 235grams Net mass
Price: 0.095-0.13 USD
low saturation transistor, SOT23-3, 50V, 2A, 625mW, FMMT619TA
Price: 6-8 USD
TV signal processor-Teletext decoder, QFP, Meshing of defined area, 16-bit Data pointer
Price: 2.89-3.15 USD
5W, 12.5V, silicon NPN planar transistor, Grounded emitter configuration, to-39
Price: 2-2.88 USD
TMP91CW12AFG-4VF6, 1.5V to 6V, 10W, QFP, Toshiba Semiconductor
