IRL1404SPBF

MOSFET

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SeekIC No. : 00153516 Detail

IRL1404SPBF: MOSFET

floor Price/Ceiling Price

US $ 1.32~2.46 / Piece | Get Latest Price
Part Number:
IRL1404SPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.46
  • $1.68
  • $1.34
  • $1.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 4 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 160 A
Resistance Drain-Source RDS (on) : 4 m Ohms


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free



Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 160 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 110
IDM Pulsed Drain Current 640
PD @ TA = 25 Power Dissipation 3.8 W
PD @ TC = 25 Power Dissipation 200 W
  Linear Derating Factor 1.3 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 520 mJ
IAR Avalanche Current 95 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25, L = 0.35mH RG = 25, IAS = 95A. (See Figure 12)
ISD 95A, di/dt 160A/s, VDD V(BR)DSS, TJ 175
Calculated continuous current based on maximum allowable junction temperature; for recommended current-handing of the package refer to Design Tip # 93-4.



Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL1404SPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL1404SPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRL1404SPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1404SPbF provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL1404SPbF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1404L) is available for low.




Parameters:

Technical/Catalog InformationIRL1404SPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C160A
Rds On (Max) @ Id, Vgs4 mOhm @ 95A, 10V
Input Capacitance (Ciss) @ Vds 6600pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 5V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL1404SPBF
IRL1404SPBF



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