IRL2203NLPbF

Advanced HEXFET ^® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr emely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d esign that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable de
vice for use in a wide variety of applications.

The D² Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D² Pak is suitable f or high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical s urface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.