MFG:IR Package Cooled:TO-220 D/C:07+
MFG: IR
Package Cooled: TO-220
D/C: 07+
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter | Symbol | Rating | Unit |
| Continuous Drain Current, VGS @ -10V,Tc = 25 | ID | 116 | A |
| Continuous Drain Current, VGS @ -10V,Tc = 100 | ID | 82 | A |
| Pulsed Drain Current*1 | IDM | 400 | A |
| Power Dissipation Tc = 25 | PD | 180 | W |
| Linear Derating Factor | 1.2 | /W | |
| Gate-to-Source Voltage | VGS | ±16 | V |
| Single Pulse Avalanche Energy*4 | EAS | 60 | mJ |
| Repetitive Avalanche Energy | EAR | 18 | mJ |
| Peak Diode Recovery dv/dt *2 | dv/dt | 5.0 | V/ns |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew | 10 lbf•in (1.1N•m) | ||
IRL1004
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Advanced HEXFET ® Power MOSFETs from International Rectifier IRL2203NLPbF utilize advanced processing techniques to achieve extr emely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device d esign ...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL2203NL utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HE...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL2203N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL2203N desig...
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