MFG:IR Package Cooled:TO-263 D/C:09+
MFG: IR
Package Cooled: TO-263
D/C: 09+
Description: These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters...
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 39 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @TC = 25°C | C Power Dissipation | 89 | W |
| Linear Derating Factor | 0.71 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| EAS | Single Pulse Avalanche Energy | 220 | mJ |
| IAR | Avalanche Current | 35 | A |
| EAR | Repetitive Avalanche Energy | 8.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRL3102S
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