IRL3102S

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power - Max: 89W
Gate Charge (Qg) @ Vgs: 58nC @ 4.5V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 61A
Rds On (Max) @ Id, Vgs: 13 mOhm @ 37A, 7V
Input Capacitance (Ciss) @ Vds: 2500pF @ 15V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	61	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	39
IDM	Pulsed Drain Current	240
PD @TC = 25°C	C Power Dissipation	89	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	±10	V
EAS	Single Pulse Avalanche Energy	220	mJ
IAR	Avalanche Current	35	A
EAR	Repetitive Avalanche Energy	8.9	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and TSTG Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

These HEXFET Power MOSFETs IRL3102S were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The D²Pak IRL3102S is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL3102S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRL3102S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.