MFG:IR Package Cooled:TO-220 D/C:08+
MFG: IR
Package Cooled: TO-220
D/C: 08+
Description: These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters...
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO- 220 contribute to its wide acceptance throughout the industry.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 61 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 39 | |
| IDM | Pulsed Drain Current | 240 | |
| PD @TC = 25°C | C Power Dissipation | 89 | W |
| Linear Derating Factor | 0.71 | W/°C | |
| VGS | Gate-to-Source Voltage | ±10 | V |
| VGSM | Gate-to-Source Voltage (Start Up Transient, tp = 100s) |
14 | V |
| EAS | Single Pulse Avalanche Energy | 220 | mJ |
| IAR | Avalanche Current | 35 | A |
| EAR | Repetitive Avalanche Energy | 8.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction and TSTG Storage Temperature Range |
-55 to + 150 | °C |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRL3102
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