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Part Number: IRL3103LPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utiliz...


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IRL3103LPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL3103L) is available for lowprofile applications.

IRL3103LPbF Maximum Ratings

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V(Silicon Limited) 64 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V(See Fig. 9) 45
IDM Pulsed Drain Current 220
PD @ TC = 25 Power Dissipation 94 W
  Linear Derating Factor 0.63 W/
VGS Gate-to-Source Voltage ±16 V
IAR Avalanche Current 34 A
EAR Repetitive Avalanche Energy 22 mJ
dv/dt Peak Diode Recovery dv/dt 5.0
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 175
  Soldering Temperature, for 10 seconds 300 (1.6 mm from case)
  Mounting torque, 6-32 or M3 screw 10 lbf`in (1`1N?m)  
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
ISD 34A, di/dt 120A/s, VDD V(BR)DSS,TJ 175

IRL3103LPbF Features

` Advanced Process Technology
` Surface Mount (IRL3103S)
` Low-profile through-hole (IRL3103L)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free

IRL3103LPbF datasheet

IRL1004
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