MFG:ir Package Cooled:TO-220 D/C:04+
MFG: ir
Package Cooled: TO-220
D/C: 04+
Description: These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters...
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @5.0V |
110 |
|
| ID @ TC = 100°C | Continuous Drain Current, VGS @5.0V |
67 |
A |
| IDM | Pulsed Drain Current |
420 |
|
| PD @TC = 25°C | Power Dissipation |
140 |
W |
| Linear Derating Factor |
1.1 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 10 |
V |
| VGSM | Gate-to-Source Voltage (Start Up Transient, tp = 100s) |
14 |
V |
| EAS | Single Pulse Avalanche Energy |
390 |
mJ |
| IAR | Avalanche Current |
64 |
A |
| EAR | Repetitive Avalanche Energy |
14 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
| Mounting torque, 6-32 or M3 screw. | 10 lbf•in (1.1N•m) |
IRL3502
PDF/DataSheet Download
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