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MFG:IR  Package Cooled:TO-263  D/C:09+  

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Part Number: IRL3502S

 

MFG: IR

Package Cooled: TO-263

D/C: 09+

Description: These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters...


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IRL3502S General Description


These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

IRL3502S Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 4.5V 110 A
ID @ TC = 100°C Continuous Drain Current, V GS @ 4.5V 67 A
IDM Pulsed Drain Current 420 A
PD @TC = 25°C Power Dissipation 140 W
  Linear Derating Factor 1.1 W/°C
VGS Gate-to-Source Voltage ±10 V
VGSM Gate-to-Source Voltage
(Start Up Transient, tp = 100s)
14 V
EAS Single Pulse Avalanche Energy 390 mJ
IAR Avalanche Current 64 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150
  Soldering Temperature, for 10 seconds 300 (1.6mm from case)

IRL3502S datasheet

IRL3502S
PDF/DataSheet Download

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