IRL3502SPbF

      The features of IRL3502SPbF are Advanced Process Technology, Surface Mount, Optimized for 4.5V-7.0V Gate Drive, Ideal for CPU Core DC-DC Converters, Fast Switching, Lead-Free
      These HEXFET Power MOSFETs IRL3502SPbF were designed speoincally to meetthe demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efliciency at minimum cost. The D2Pak is a surface mount power package capable of accommodating die sizes upto HEX-4. It providesthe highest power capability and the lowest possible on-resistance in any existing surface mount package, The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
      The absolute maximum ratings of IRL3502SPbF are VGS (Gate-to-Source Voltage)=±10V, ID @ TC= 25°C(Continuous Drain Current, VGS @ 4.5V)=110A, ID @ TC = 100°C (Continuous Drain Current, VGS @ 4.5V )=67A, IDM (Pulsed Drain Current)=420A, EAS (Single Pulse Avalanche Energy)=390mJ, PD (@Tc = 25°C Power Dissipation)=140W, IAR( Avalanche Current)= 14A, EAR (Repetitive Avalanche Energy)=14mJ, dv/dt( Peak Diode Recovery dv/dt) =5.0V/ns, TJ (Operating Junction and)= -55 to + 150°C, TSTG(Storage Temperature Range Soldering Temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( Junction-to-Case )=0.89°C/W, RJA( Junction-to-Ambient )=40°C/W.