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MFG:ir  Package Cooled:TO-262  D/C:04+  

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Part Number: IRL3705NL

 

MFG: ir

Package Cooled: TO-262

D/C: 04+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRL3705NL General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.

The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3705NL) is available for lowprofile applications.

IRL3705NL Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
89Ü
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
63
IDM Pulsed Drain Current
310
PD @TA = 25°C Power Dissipation
3.8
W
PD @TC = 25°C Power Dissipation
170
W
  Linear Derating Factor
1.1
W/°C
VGS Gate-to-Source Voltage
± 16
V
EAS Single Pulse Avalanche Energy
340
mJ
IAR Avalanche Current
46
A
EAR Repetitive Avalanche Energy
1.7
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )

IRL3705NL Features

·Advanced Process Technology
·Surface Mount (IRL3705NS)
·Low-profile through-hole (IRL3705NL)
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated
·Logic-Level Gate Drive

IRL3705NL datasheet

IRL3705NL
PDF/DataSheet Download

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