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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 180 A | ||
| Resistance Drain-Source RDS (on) : | 4.8 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Symbol | Parameter | Max. | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 180 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 130 | |
| IDM | Pulsed Drain Current | 720 | |
| PD @TC = 25 | Maximum Power Dissipation | 210 | W |
| PD @TC = 100 | Maximum Power Dissipation | 100 | W |
| Linear Derating Factor | 1.4 | W/ | |
| TJ , TSTG | Junction and Storage Temperature Range | -55 to + 175 |
| Technical/Catalog Information | IRL3716PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 180A |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 90A, 10V |
| Input Capacitance (Ciss) @ Vds | 5090pF @ 10V |
| Power - Max | 210W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 79nC @ 4.5V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRL3716PBF IRL3716PBF |