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Part Number: IRL3803VLPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


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IRL3803VLPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectionresistance and can dissipate up to 2.0W in a typical surface mount application.

IRL3803VLPbF Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current,VGS @ 10V
140
A
ID @ TC = 100 Continuous Drain Current,VGS @ 10V
110
IDM Pulsed Drain Current
470
PD @ TC = 25 Power Dissipation
3.8
W
PD @ TC = 25 Power Dissipation
200
  Linear Derating Factor
1.4
W/
VGS Gate-to-Source Voltage
±16
V
IAR Avalanche Current
71
A
EAR Repetitive Avalanche Energy
20
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )

IRL3803VLPbF Features

` Logic-Level Gate Drive
` Advanced Process Technology
` Surface Mount (IRL3803VS)
` Low-profile through-hole (IRL3803VL)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free

IRL3803VLPbF datasheet

IRL1004
PDF/DataSheet Download

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