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Part Number: IRL3803VPbF

 

 

 

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...


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IRL3803VPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL3803VPbF Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25
 Continuous Drain Current, VGS @ 10V
140
A
ID @ TC = 100
 Continuous Drain Current, VGS @ 10V
110
IDM
 Pulsed Drain Current
470
PD @TC = 25
 Power Dissipation
200
W
  Linear Derating Factor
1.4
W/
VGS
 Gate-to-Source Voltage
± 16
V
IAR
 Avalanche Current
71
A
EAR
 Repetitive Avalanche Energy
20
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
  

IRL3803VPbF Features

 Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

IRL3803VPbF datasheet

IRL1004
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