Purchase IRL3803VSPbF, In-stock IRL3803VSPbF From SeekIC.
Part Number: IRL3803VSPbF
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...
- Table of contents:
IRL3803VSPbF
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Suppliers
DataSheet
General Description
IRL3803VSPbF General Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectionresistance and can dissipate up to 2.0W in a typical surface mount application.
IRL3803VSPbF Maximum Ratings
| Parameter |
Max. |
Units | |
| ID @ TC = 25 | Continuous Drain Current,VGS @ 10V |
140 |
A |
| ID @ TC = 100 | Continuous Drain Current,VGS @ 10V |
110 | |
| IDM | Pulsed Drain Current |
470 | |
| PD @ TC = 25 | Power Dissipation |
3.8 |
W |
| PD @ TC = 25 | Power Dissipation |
200 | |
| Linear Derating Factor |
1.4 |
W/ | |
| VGS | Gate-to-Source Voltage |
±16 |
V |
| IAR | Avalanche Current |
71 |
A |
| EAR | Repetitive Avalanche Energy |
20 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to 175 |
|
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRL3803VSPbF Features
` Logic-Level Gate Drive
` Advanced Process Technology
` Surface Mount (IRL3803VS)
` Low-profile through-hole (IRL3803VL)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free
` Advanced Process Technology
` Surface Mount (IRL3803VS)
` Low-profile through-hole (IRL3803VL)
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Lead-Free
IRL1004
PDF/DataSheet Download
- Datasheet: IRL1004
- File Size: 91524 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRL1004L
- HEXFET? Power MOSFET
- 125957 KB
- ·IRL1004S
- HEXFET? Power MOSFET
- 125957 KB
- ·IRL1104
- IRF [International Rectifier]
- HEXFET Power MOSFET
- 92621 KB
- ·IRL1104L
- HEXFET? Power MOSFET
- 197139 KB
- ·IRL1104S
- HEXFET? Power MOSFET
- 197139 KB
- ·IRL1404
- IRF [International Rectifier]
- HEXFET Power MOSFET
- 127861 KB
- ·IRL1404L
- HEXFET? Power MOSFET
- 136988 KB
- ·IRL1404S
- HEXFET? Power MOSFET
- 136988 KB
IRL3803VSPbF Relative Products
IRL3803VS
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VS desi...
IRL3803VPbF
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VPbF...
IRL3803VLPbF
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VLPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VLPb...
IRL3803V
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803Vutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803Vdesign ...
IRL3803STRRPBF
MOSFET N-CH 30V 140A D2PAK
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IRL3803STRR
MOSFET N-CH 30V 140A D2PAK
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