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Part Number: IRL510S
Description: Third generation HEXFETs from international rectifier provide the designer with the best combination o...


Description: Third generation HEXFETs from international rectifier provide the designer with the best combination o...
Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0Win a typical surface mount application.
The features of IRL510S can be summarized as (1)surface mount; (2)available in tape & reel; (3)dynamic dv/dt rating; (4)repetitive avalanche rated; (5)logic -level gate drive; (6)RDS(on) specified at VGS=4V & 5V; (7)175°C operating temperature.
The absolute maximum ratings of IRL510S are (1)ID @, TC = 25°C, GS@5.0V continuous drain current: 5.6A; (2)ID @ TC = 100°C, GS@5.0V continuous drain current: 4.0A; (3)pulsed drain current IDM: 18A; (4)PD @ TC = 25°C Max. power dissipation: 43W; (5)linear derating factor: 1.2 W/°C; (6)VGS gate-to-source voltage: ±10V; (7)EAS single pulse avalanche energy: 100 mJ; (8)IAR avalanche current: 5.6A; (9)EAR repetitive avalanche energy: 4.3mJ; (10)dv/dt peak diode recovery dv/dt: 5.5V/ns; (11)TJ operating junction: -55 to 175°C; (12)TJ TSTG storage temperature range: -55 to 175°C; (13)lead temperature: 300 (0.063 in. (1.6mm) from case for 10s); (14)PD @ TA= 25°C Max. power dissipation: 3.7W.
IRL510S
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