Position: Home > Datasheet list > IRL Series > Index I > IRL510S
Electronica China

Purchase IRL510S, In-stock IRL510S From SeekIC.

 

IRL510S Product Image

IRL Series Datasheet download

Five Points

Part Number: IRL510S

 

 

 

 

Description: Third generation HEXFETs from international rectifier provide the designer with the best combination o...


Urgent Purchase

IRL510S General Description


Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0Win a typical surface mount application.

The features of IRL510S can be summarized as (1)surface mount; (2)available in tape & reel; (3)dynamic dv/dt rating; (4)repetitive avalanche rated; (5)logic -level gate drive; (6)RDS(on) specified at VGS=4V & 5V; (7)175°C operating temperature.

The absolute maximum ratings of IRL510S are (1)ID @, TC = 25°C, GS@5.0V continuous drain current: 5.6A; (2)ID @ TC = 100°C, GS@5.0V continuous drain current: 4.0A; (3)pulsed drain current IDM: 18A; (4)PD @ TC = 25°C Max. power dissipation: 43W; (5)linear derating factor: 1.2 W/°C; (6)VGS gate-to-source voltage: ±10V; (7)EAS single pulse avalanche energy: 100 mJ; (8)IAR avalanche current: 5.6A; (9)EAR repetitive avalanche energy: 4.3mJ; (10)dv/dt peak diode recovery dv/dt: 5.5V/ns; (11)TJ operating junction: -55 to 175°C; (12)TJ TSTG storage temperature range: -55 to 175°C; (13)lead temperature: 300 (0.063 in. (1.6mm) from case for 10s); (14)PD @ TA= 25°C Max. power dissipation: 3.7W.

IRL510S datasheet

IRL510S
PDF/DataSheet Download

Find IRL510S Suppliers

  • ·IRL1004
  • IRF [International Rectifier] 
  • HEXFET Power MOSFET 
  • 91524 KB
  • IRL1004 Datasheet Download
  • ·IRL1004L
  •  
  • HEXFET? Power MOSFET 
  • 125957 KB
  • IRL1004L Datasheet Download
  • ·IRL1004S
  •  
  • HEXFET? Power MOSFET 
  • 125957 KB
  • IRL1004S Datasheet Download
  • ·IRL1104
  • IRF [International Rectifier] 
  • HEXFET Power MOSFET 
  • 92621 KB
  • IRL1104 Datasheet Download
  • ·IRL1104L
  •  
  • HEXFET? Power MOSFET 
  • 197139 KB
  • IRL1104L Datasheet Download
  • ·IRL1104S
  •  
  • HEXFET? Power MOSFET 
  • 197139 KB
  • IRL1104S Datasheet Download
  • ·IRL1404
  • IRF [International Rectifier] 
  • HEXFET Power MOSFET 
  • 127861 KB
  • IRL1404 Datasheet Download
  • ·IRL1404L
  •  
  • HEXFET? Power MOSFET 
  • 136988 KB
  • IRL1404L Datasheet Download

Related Part Number

    IRL510S Relative Products

    • IRL510A

      IRL510A

      MOSFET N-CHAN 100V 5.6A TO-220

    • IRL510, SiHL510

      IRL510, SiHL510

      Power MOSFET IRL510, SiHL510

    • IRL404

      IRL404

      Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL404 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL404...

    • IRL3803VSPbF

      IRL3803VSPbF

      Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VSPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VSPb...

    • IRL3803VS

      IRL3803VS

      Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VS desi...

    • IRL3803VPbF

      IRL3803VPbF

      Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VPbF...

    Hotspot Suppliers Product

    • Models: PC817
Price: 0.09-0.13 USD

      PC817

      Price: 0.09-0.13 USD

      photocoupler, DIP-4, 50mA

    • Models: CXA2175Q
Price: 2-3 USD

      CXA2175Q

      Price: 2-3 USD

      QFP US Audio Multiplexing Decoder

    • Models: HB2E-DC24V
Price: 5-8 USD

      HB2E-DC24V

      Price: 5-8 USD

      relay, 16 pin, DIP, DC24V

    • Models: 1GC1-4210
Price: 200-220 USD

      1GC1-4210

      Price: 200-220 USD

      1GC1-4210, sop16

    • Models: IRFZ24N
Price: 0.47-0.62 USD

      IRFZ24N

      Price: 0.47-0.62 USD

      HEXFET, TO-220, 17 A, 45 W, Advanced Process Technology, Fast Switching

    • Models: TDA7000
Price: 0.917-1 USD

      TDA7000

      Price: 0.917-1 USD

      FM radio circuit, TDA7000, 2,7 to 10 V, 1,5 to 110 MHz, 200 mV Signal handling, 12 V Supply voltage

    • Models: D300JCT-E1-120W
Price: 3800-4000 USD

      D300JCT-E1-120W

      Price: 3800-4000 USD

      Intel Dialogic, high density communications, dialogic JCT media board

    • Models: STK4130MK2
Price: 6-8 USD

      STK4130MK2

      Price: 6-8 USD

      STK4130MK2 - 2ch./1packge, - Power Supply 6W/ch. ~ 100W/ch. THD=0.4% - Sanyo Semicon Device

    • Models: AD820A
Price: 1-10 USD

      AD820A

      Price: 1-10 USD

      FET-Input Op Amp, SOP, 800μA

    • Models: FQPF4N90C
Price: 1-2 USD

      FQPF4N90C

      Price: 1-2 USD

      N-Channel MOSFET, TO-220F, 28 nC gate charge, 12 pF Low Crss, Fast switching

    • Models: 2SC5200-O
Price: 1.9-2.5 USD

      2SC5200-O

      Price: 1.9-2.5 USD

      TRANS NPN 230V 15A TO-3PL - 2SC5200-O

    • Models: KMS231GP
Price: 0.05-0.15 USD

      KMS231GP

      Price: 0.05-0.15 USD

      Microminiature Side Actuated Tact Switch, Compact size, Date code marking, 100 mΩ, 1 mA, 50 VDC, E...

    Map list:   ABCDEFGHIJKLMNOPQRSTUVWXYZ    0123456789All