Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL404 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL404...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VSPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VSPb...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VS utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VS desi...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VPbF...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803VLPbF utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803VLPb...
Advanced HEXFET® Power MOSFETs from International Rectifier IRL3803Vutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL3803Vdesign ...