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IRL520L

MOSFET N-CH 100V 9.2A TO-262

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SeekIC No. : 003432457 Detail

IRL520L: MOSFET N-CH 100V 9.2A TO-262

IRL520L Data Sheet

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Part Number:
IRL520L
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 12nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 490pF @ 25V
Power - Max: 3.7W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262-3    

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 2V @ 250µA
Input Capacitance (Ciss) @ Vds: 490pF @ 25V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 12nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 9.2A
Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 5V
Power - Max: 3.7W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262-3


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