MFG:IR Package Cooled:D2-PAK D/C:09+
MFG: IR
Package Cooled: D2-PAK
D/C: 09+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL520NL) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 10 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 7.1 | A |
| IDM | Pulsed Drain Current | 35 | A |
| PD @ TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 48 | W |
| Linear Derating Factor | 0.32 | W/°C | |
| VGS | Gate-to-Source Voltage | ±16 | V |
| EAS | Single Pulse Avalanche Energy | 85 | mJ |
| IAR | Avalanche Current | 6.0 | A |
| EAR | Repetitive Avalanche Energy | 4.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
IRL520NS
PDF/DataSheet Download
MOSFET N-CH 100V 10A TO-220AB
MOSFET N-CH 100V 10A TO-262
Fifth Generation HEXFETs from International Rectifier IRL520NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized IRL520NL device design that HEX...
Fifth Generation HEXFETs from International Rectifier IRL520N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL520N design that HEXFE...
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