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MFG:IR  Package Cooled:TO-220  

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Part Number: IRL530N

 

MFG: IR

Package Cooled: TO-220

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRL530N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRL530N Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
IDM
Pulsed Drain Current
60
PD @TC = 25°C
Power Dissipation
79
W
Linear Derating Factor
0.53
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy
150
mJ
IAR
Avalanche Current
9.0
A
EAR
Repetitive Avalanche Energy
7.9
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
oC
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)

IRL530N Features

·Logic-Level Gate Drive
·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated

IRL530N datasheet

IRL530N
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