MOSFET N-Chan 100V 28 Amp
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 28 A | ||
| Resistance Drain-Source RDS (on) : | 0.077 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220 | Packaging : | Tube |
|
PARAMETER |
SYMBOL |
LIMIT |
UNIT | ||
|
Drain-Source Voltage |
VDS |
100 |
V | ||
|
Gate-Source Voltage |
VGS |
±10 | |||
|
Continuous Drain Current |
VGS at 10 V |
TC = 25 |
ID |
28 |
A |
|
TC = 100 |
20 | ||||
|
Pulsed Drain Currenta, e |
IDM |
110 | |||
|
Linear Derating Factor |
1.0 |
W/ | |||
|
Single Pulse Avalanche Energyb |
EAS |
440 |
mJ | ||
|
Avalanche Currenta |
IAR |
28 |
A | ||
|
Single Pulse Avalanche Energyb, e |
EAR |
15 |
mJ | ||
|
Maximum Power Dissipation |
TC = 25
|
PD |
150 |
W | |
|
Peak Diode Recovery dV/dtc, e |
dV/dt |
5.5 |
V/ns | ||
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
- 55 to + 175 |
|||
|
Soldering Recommendations (Peak Temperature) |
for 10 s |
300d | |||
|
Mounting Torque |
6-32 or M3 screw |
10 |
lbf ` in | ||
|
1.1 |
N ` m | ||||
Third generation Power MOSFETs IRL530S, SiHL530S from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package of IRL530S, SiHL530S is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.